View STD2N105K5_8926585.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. november 2014 docid026321 rev 3 1/21 STD2N105K5, stp2n105k5, stu2n105k5 n-channel 1050 v, 6 typ., 1.5 a mdmesh? k5 power mosfets in dpak, to-220 and ipak packages datasheet - production data figure 1. internal schematic diagram features ? industry?s lowest r ds(on) x area ? industry?s best figure of merit (fom) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these very high voltage n-channel power mosfets are designed using mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. '7$% * 6 am01476v1 to-220 1 2 3 tab 1 3 tab dpak ipak 3 2 1 tab order codes v ds r ds(on) max i d p tot STD2N105K5 1050 v 8 1.5 a 60 w stp2n105k5 stu2n105k5 table 1. device summary order codes marking package packaging STD2N105K5 2n105k5 dpak tape and reel stp2n105k5 to-220 tube stu2n105k5 ipak www.st.com
contents STD2N105K5, stp2n105k5, stu2n105k5 2/21 docid026321 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 dpak, STD2N105K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-220, stp2n105k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 ipak, stu2n105k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
docid026321 rev 3 3/21 STD2N105K5, stp2n105k5, stu2n105k5 electrical ratings 21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 1.5 a i d drain current (continuous) at t c = 100 c 0.95 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 6 a p tot total dissipation at t c = 25 c 60 w i ar max current during repetitive or single pulse avalanche 0.5 a e as single pulse avalanche energy (starting t j = 25 c, i d =0.5 a, v dd = 50 v) 90 mj dv/dt (2) 2. i sd 1.5 a, di/dt 100 a/s, v ds(peak) v (br)dss. peak diode recovery voltage slope 4.5 v/ns dv/dt (3) 3. v ds 840 v mosfet dv/dt ruggedness 50 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 2.08 c/w r thj-amb thermal resistance junction-ambient max 62.50 c/w
electrical characteristics STD2N105K5, stp2n105k5, stu2n105k5 4/21 docid026321 rev 3 2 electrical characteristics (tcase =25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 1050 v i dss zero gate voltage, drain current (v gs = 0) v ds = 1050 v 1 a v ds = 1050 v, t c =125 c 50 a i gss gate-body leakage current v gs = 20 v; v ds =0 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 0.75 a 6 8 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 -115- pf c oss output capacitance - 15 - pf c rss reverse transfer capacitance -0.5- pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 840 v -17-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -6-pf r g intrinsic gate resistance f = 1 mhz open drain - 20 - q g total gate charge v dd = 840 v, i d = 1.5 a v gs =10 v (see figure 18 ) -10-nc q gs gate-source charge - 1.5 - nc q gd gate-drain charge - 8 - nc
docid026321 rev 3 5/21 STD2N105K5, stp2n105k5, stu2n105k5 electrical characteristics 21 the built-in back-to-back zener diodes have specifically been designed to enhance the device's esd capability. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 525 v, i d = 0.75 a, r g = 4.7 , v gs = 10 v (see figure 17) - 14.5 - ns t r rise time - 8.5 - ns t d(off) turn-off-delay time - 35 - ns t f fall time - 38.5 - ns table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 1.5 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 6 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 1.5 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 1.5 a, di/dt = 100 a/s v dd = 60 v (see figure 19) - 326 ns q rr reverse recovery charge - 1.19 c i rrm reverse recovery current - 7.3 a t rr reverse recovery time i sd = 1.5 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 19) - 525 ns q rr reverse recovery charge - 1.83 c i rrm reverse recovery current - 7 a table 8. gate-source zener diode symbol parameter test conditions min typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1ma, i d =0 30 - - v
electrical characteristics STD2N105K5, stp2n105k5, stu2n105k5 6/21 docid026321 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak and ipak figure 3. thermal impedance for dpak and ipak i d 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms tj=150c tc = 2 5 c single pulse 0.01 1000 gipg210320141029sa figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 figure 6. output characteristics figure 7. transfer characteristics i d 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms tj=150c tc = 2 5 c single pulse 0.01 gipg210320141032sa i d 1.0 0.5 02 6 v ds (v) 4 (a) 0.0 v gs = 10,11v 9v 8v 7v 6v 8 1.5 2.0 2.5 10 12 14 16 gipg210320141045sa i d 1 0.5 56 8 v gs (v) 7 (a) 0 v ds = 20v 9 1.5 2 2.5 10 gipg210320141056sa
docid026321 rev 3 7/21 STD2N105K5, stp2n105k5, stu2n105k5 electrical characteristics 21 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v gs 4 2 02 6 q g (nc) 4 (v) 0 8 6 8 10 12 10 v ds (v) 0 100 200 300 400 500 600 700 800 v dd = 840 v i d = 1.5 a v ds gipg210320141105sa r ds(on) 6 01 i d (a) 2 () 5 7 8 v gs = 10v 9 gipg210320141116sa c 10 1 0.1 1 100 v ds (v) 10 (pf) 0.1 100 1000 gipg210320141129sa e 2 0 200 600 v ds (v) 400 ( j) 0 800 gipg210320141201sa v gs(th) 0.8 -100 -50 50 t j (c) 0 (norm) 0.4 100 0.6 1 1.2 150 i d = 100 a gipg210320141203sa r ds(on) 1 -100 -50 50 t j (c) 0 (norm) 0 100 0.5 1.5 2 150 2.5 i d = 0.75a v gs = 10v gipg210320141419sa
electrical characteristics STD2N105K5, stp2n105k5, stu2n105k5 8/21 docid026321 rev 3 figure 14. source-drain diode forward characteristics figure 15. normalized v (br)dss vs temperature v sd 0.7 00.2 0.6 i sd (a) 0.4 (v) 0.5 0.8 0.6 0.8 0.9 1 t j = 150c t j = -50c t j = 25c 1 1.2 gipg210320141436sa v (br)dss 0.95 -100 -50 50 t j (c) 0 (norm) 0.85 100 0.9 1 1.05 150 1.1 i d = 1ma 1.15 gipg210320141421sa figure 16.maximum avalanche energy vs starting t j ( $6 7 - ?& p- , ' $ 9 '' 9 *,3*6$
docid026321 rev 3 9/21 STD2N105K5, stp2n105k5, stu2n105k5 test circuits 21 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STD2N105K5, stp2n105k5, stu2n105k5 10/21 docid026321 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid026321 rev 3 11/21 STD2N105K5, stp2n105k5, stu2n105k5 package mechanical data 21 4.1 dpak, STD2N105K5 figure 23. dpak (to-252) type a drawing b4
package mechanical data STD2N105K5, stp2n105k5, stu2n105k5 12/21 docid026321 rev 3 table 9. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 l1 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
docid026321 rev 3 13/21 STD2N105K5, stp2n105k5, stu2n105k5 package mechanical data 21 figure 24. dpak (to-252) type a footprint (a) a. all dimensions are in millimeters )3b4
package mechanical data STD2N105K5, stp2n105k5, stu2n105k5 14/21 docid026321 rev 3 4.2 to-220, stp2n105k5 figure 25. to-220 type a drawing bw\sh$b5hyb7
docid026321 rev 3 15/21 STD2N105K5, stp2n105k5, stu2n105k5 package mechanical data 21 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data STD2N105K5, stp2n105k5, stu2n105k5 16/21 docid026321 rev 3 4.3 ipak, stu2n105k5 figure 26. ipak (to-251) drawing 0068771_l
docid026321 rev 3 17/21 STD2N105K5, stp2n105k5, stu2n105k5 package mechanical data 21 table 11. ipak (to-251) type a mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e2.28 e1 4.40 4.60 h16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
packaging mechanical data STD2N105K5, stp2n105k5, stu2n105k5 18/21 docid026321 rev 3 5 packaging mechanical data figure 27. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
docid026321 rev 3 19/21 STD2N105K5, stp2n105k5, stu2n105k5 packaging mechanical data 21 figure 28. reel table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STD2N105K5, stp2n105k5, stu2n105k5 20/21 docid026321 rev 3 6 revision history table 13. document revision history date revision changes 08-may-2014 1 first release. 14-nov-2014 2 document status promoted from preliminary to production data. updated title, features and description in cover page. updated figure 9: static drain-source on-resistance , section 4.1: dpak, STD2N105K5 and section 4.3: ipak, stu2n105k5 . minor text changes. 19-nov-2004 3 updated v gs in table 2: absolute maximum ratings and i gss in table 4: on /off states .
docid026321 rev 3 21/21 STD2N105K5, stp2n105k5, stu2n105k5 21 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

▲Up To Search▲

Price & Availability of STD2N105K5

	To Download STD2N105K5 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .